Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
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منابع مشابه
Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC
The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...
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We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and struc...
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We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...
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Current advancement in electronic devices is so rapid that silicon, the semiconductor material most widely used today, needs to be replaced in some of the fields. Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at elevated temperature, and in harsh environments. Hexagonal polytypes of SiC, su...
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Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C an...
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تاریخ انتشار 2015